IJESD 2017 Vol.8(5): 318-322 ISSN: 2010-0264
doi: 10.18178/ijesd.2017.8.5.970
doi: 10.18178/ijesd.2017.8.5.970
Analysis of High-Power LED Packages with Diamond and CNT Film
Cheng Yi Hsu and Yuli Lin
Abstract—In this study, analysis using high thermal
conductive material for measuring junction temperature (Tj) in
high power GaN-based light emitting diodes (LED) was
presented. Thermal characteristics of high power
Light-emitting-diode have been analyzed by using various
different structure conduction models. The forward operation
voltage is advantageously used to measure the junction
temperature of light emitting diodes. Using this method,
junction temperature (Tj) of LED under various structures and
chip mounting methods was measured. It was found that the
junction temperature can be reduced considerably by using
diamond film substrates and CNT film substrates. In this study,
for model F structure, the junction temperature using diamond
film can be decreased by about 10.8% under 1.5W power,
decreased by about 12% under 2.6W power and decreased by
about 11.6% under 4.2W power for 1 mm square die. The
junction temperature using CNT film can be decreased by
about 12.7% under 1.5W power, decreased by about 14.1%
under 2.6W power and decreased by about 14.2% under 4.2W
power for 1 mm square die. The thermal resistance (RT) of
diamond film can be measured to be 12.6℃/W under 4.2W
power and the thermal resistance (RT) of CNT film can be
measured to be 12.2℃/W under 4.2W.
Index Terms—Junction temperature, diamond film, light-emitting-diode, CNT film.
Cheng Yi Hsu and Yuli Lin are with College of Engineering, Chung Hua University, Hsinchu, Taiwan (e-mail: d09724003@chu.edu.tw, yulilin@chu.edu.tw).
Index Terms—Junction temperature, diamond film, light-emitting-diode, CNT film.
Cheng Yi Hsu and Yuli Lin are with College of Engineering, Chung Hua University, Hsinchu, Taiwan (e-mail: d09724003@chu.edu.tw, yulilin@chu.edu.tw).
Cite: Cheng Yi Hsu and Yuli Lin, "Analysis of High-Power LED Packages with Diamond and CNT Film," International Journal of Environmental Science and Development vol. 8, no. 5, pp. 318-322, 2017.
General Information
- ISSN: 2010-0264 (Print); 2972-3698 (Online)
- Abbreviated Title: Int. J. Environ. Sci. Dev.
- Frequency: Bimonthly
- DOI: 10.18178/IJESD
- Editor-in-Chief: Prof. Richard Haynes
- Managing Editor: Ms. Cherry L. Chen
- Indexing: Scopus (CiteScore 2022: 1.4), Google Scholar, CNKI, ProQuest, EBSCO, etc.
- E-mail: ijesd@ejournal.net
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